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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF493S/D High Voltage Transistor PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER BF493S 1 2 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value -350 -350 -6.0 -500 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/C Watts mW/C C CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (1) (IC = -1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -100 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -100 mAdc, IC = 0) Collector Cutoff Current (VCE = -250 Vdc) Emitter Cutoff Current (VEB = -6.0 Vdc, IC = 0) Collector Cutoff Current (VCB = -250 Vdc, IE = 0, TA = 25C) (VCB = -250 Vdc, IE = 0, TA = 100C) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICES IEBO ICBO -- -- -0.005 -1.0 -350 -350 -6.0 -- -- -- -- -- -10 0.1 Vdc Vdc Vdc nAdc mAdc mAdc v 300 ms; Duty Cycle v 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 BF493S ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) Collector - Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) Base - Emitter On Voltage (IC = -20 mA, IB = -2.0 mA) hFE 25 40 VCE(sat) VBE(sat) -- -- -- -- -2.0 -2.0 Vdc Vdc -- DYNAMIC CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 20 MHz) Common-Emitter Feedback Capacitance (VCB = -100 Vdc, IE = 0, f = 1.0 MHz) fT Cre 50 -- -- 1.6 MHz pF 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data BF493S 150 100 hFE, DC CURRENT GAIN +25C 70 50 -55C TJ = +125C VCE = -10 Vdc 30 20 15 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -80 -100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 50 Cib C, CAPACITANCE (pF) 20 10 5.0 f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) 100 80 60 40 30 20 TJ = 25C VCE = -20 Vdc 2.0 Ccb 1.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100-200 -500 -1000 VR, REVERSE VOLTAGE (VOLTS) 0 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -50 -100 Figure 2. Capacitances Figure 3. Current-Gain -- Bandwidth Product -1.0 IC, COLLECTOR CURRENT (mA) -500 1.0 ms 1.0 s 100 s -0.8 V, VOLTAGE (VOLTS) VBE @ VCE = -10 V -0.6 -200 -100 MPSA93 -50 1.5 WATT THERMAL LIMITATION @ TC = 25C 625 mW THERMAL LIMITATION @ TA = 25C -0.4 MPSA92 -20 -10 -0.2 VCE(sat) @ IC/IB = 10 mA 0 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -50 -100 -5.0 -3.0 BONDING WIRE LIMITATION SECOND BREAKDOWN LIMITATION TJ = 150C -100 -200 -300 -5.0 -10 -20 -30 -50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. "On" Voltages Figure 5. Active Region -- Safe Operating Area Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 BF493S PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data BF493S/D *BF493S/D* |
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